000 | 00935pam a2200289 a 4500 | ||
---|---|---|---|
001 | 4961707 | ||
003 | UoK | ||
005 | 20180911145725.0 | ||
008 | 970331s1998 njua 001 0 eng | ||
010 | _a 97013152 | ||
020 | _a8120328778 | ||
040 |
_aLC _cLC _dLC _bLC |
||
050 | 0 | 0 |
_aTK7871.85 _b.K292 1998 |
082 | 0 | 0 |
_a621.3815/2 _221 |
100 | 1 | _aKano, Kanaan. | |
245 | 1 | 0 |
_aSemiconductor devices / _cKanaan Kano. |
260 |
_aUpper Saddle River, N.J. : _bPrentice Hall, _cc1998. |
||
300 |
_axv, 480 p. : _bill. ; _c25 cm. |
||
500 | _aIncludes index. | ||
650 | 0 |
_aSemiconductors _xCharacterization. |
|
650 | 0 | _aDiodes, Semiconductor. | |
650 | 0 | _aBipolar transistors. | |
650 | 0 | _aMetal oxide semiconductor field-effect transistors. | |
906 |
_a7 _bcbc _corignew _d1 _eocip _f19 _gy-gencatlg |
||
942 |
_2lcc _cLL |
||
999 |
_c723 _d723 |